Chip Manufacturing

Front-End Defect Inspection

eS800 Series
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Electron Beam Wafer Inspection Systems
es3800 Series

Product Description

The eS800 electron beam inspection system captures leading-edge physical and electrical defects on a wide range of layers and structures, supporting advanced process development and production monitoring. Featuring a new electron gun, patented optics and innovative scanning techniques, the eS800 provides higher sensitivity and improved production throughputs over the previous-generation eS3X e-beam inspectors for tighter process control on advanced layers. The eS800 e-beam wafer inspection system is part of a portfolio of advanced wafer defect inspection tools that accelerate the development and production ramp of advanced memory and logic devices.
 
  • New electron gun, a smaller pixel, and patented optics that allow a higher beam current density in a smaller spot size deliver improved sensitivity to the smallest physical defects and most subtle electrical (voltage contrast) issues
  • Wider operating conditions compared to the previous-generation eS3X tools provide the flexibility required to capture defects on a broad range of materials and layers, including low- and high-k dielectrics
  • Smart Array and noise reduction technologies enable inspection all the way to edge of the active array for capture of critical defects in the die areas that are first affected when a process starts drifting
  • New image computer supports faster throughput and advanced detection and binning algorithms for accelerated resolution of process integration issues
  • Innovative TurboScanTM methodology inspects NAND flash contacts at up to ten times the speed of the eS35
  • Classification improvements, including the integration of inline Defect Organizer (iDO), provide better nuisance filtering and the ability to separate defects by context for faster resolution of defect issues
  • Innovative µLoop® technology provides accelerated detection of systematic defects, with or without a test wafer, for faster root-cause analysis and new process characterization
  • Ease-of-use improvements, including integration of Sensitivity Tuner, accelerate recipe setup
  • Extendible platform architecture protects a fab’s capital investment
  • Shared user interface with other KLA-Tencor inspectors and review tools optimize inspector capacity and reduce production integration time
Applications

DRAM/SRAM/flash: The eS800’s improved capture of physical and voltage contrast (VC) defects supports advanced memory development and production. Employing new algorithms and noise reduction technologies, the eS800 can inspect all the way to edge of the active array, finding critical defects in the die areas where they first appear. TurboScan enables very high throughput for detection of contact defects on flash devices. The eS800’s new electron gun and patented optics provide improved detection of defects inside high aspect-ratio structures. With a wider range of operating conditions, the eS800 has better performance on a variety of materials and layers, aiding the development of new process technologies such as high-k metal gates. Additional memory defects detected by the eS800 include: subtle under etch, poly piping, contact under etch, extra poly, capacitor shorts, poly stringers, electrical shorts, missing salicide and resistive contacts.

Logic: On logic devices, the eS800 provides sensitivity to very small physical defects and higher voltage contrast sensitivity for subtle under etch defects. New binning algorithms allow defects to be classified by device structure. For example, opens on n-type can be separated from opens on p-type, enabling engineers to take appropriate corrective action to address underlying process issues. Additionally, with a broad range of operating conditions, the eS800 can detect defects on a wide variety of materials and layers, helping engineers integrate new materials and leading-edge process technologies.

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