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KLA-Tencor Unveils Optical Thin-Film Metrology Solution for Cost-Effective Production Films Control at The 65-nm Node and Beyond
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SAN JOSE, Calif., Nov. 30, 2004--KLA-Tencor (NASDAQ: KLAC) today unveiled SpectraFx 200, its most advanced, seventh-generation thin-film metrology system, to enable IC manufacturers to achieve cost-effective production control over their advanced film processes at the 65-nm node and below. Based on KLA-Tencor's proven spectroscopic ellipsometry (SE) technology, SpectraFx 200 leverages a new 150 SE option to enable qualification and monitoring of such advanced films as ultra-thin ONO layers, nitrided films, high-k and low-k dielectrics, 193-nm anti-reflective coating (ARC) layers, and engineered substrates, including silicon-on-insulator (SOI), strained silicon, and silicon germanium (SiGe). SpectraFx 200 also utilizes a unique Dielectric Pattern Metrology (DPM) capability to provide highly accurate and robust measurements of in-die process variation on product wafers non-destructively. With SpectraFx 200, chipmakers no longer have to rely on proxy measurements and can cost-effectively monitor their advanced 300-mm thin-film processes in production.

At the 65-nm node, process tolerances are so small that within-die variation and airborne molecular contamination (AMC) can have a major impact on device performance. Even a single-angstrom-thick AMC layer can make all the difference between a within-spec film process and a low-yielding one. At the same time, new types of materials are being added that require new measurement parameters, such as composition and film stress. Metrology techniques that can distinguish between extremely thin layers in multi-layer film stacks are also increasingly needed. The high cost and high risk associated with 300-mm production is also driving the need for reliable, cost-effective metrology on product wafers.

Traditional proxy measurements, which utilize blank pad structures, cannot detect these process variations at the die level, and are thus no longer enough to meet the requirements for production films control. SpectraFx 200 provides robust, non-destructive measurements that more accurately reflect process conditions at the die level, enabling chipmakers to achieve cost-effective production films control for the 65-nm node and beyond.

Enables Robust and Accurate Metrology of Within-Die Variation
Traditional scatterometry-based metrology systems obtain information on process conditions by measuring blank metal test structures in the wafer scribe lines. With KLA-Tencor's DPM capability, SpectraFx 200 measures test structures composed of alternating metal dielectric arrays, which significantly improve correlation to within-die variations. These patterned structures generate complex diffraction spectra, which are then turned into accurate measurements using powerful onboard algorithms. DPM structures are also much more resilient to chemical mechanical planarization (CMP) processing than traditional metal pads, minimizing dishing in the pads, which distorts the dielectric film measurements.

Enables Qualification and Monitoring of New Materials
The SpectraFx 200 leverages KLA-Tencor' production-proven Resolution optics to meet the sensitivity, precision and stability requirements for ultra-thin, multi-layer film stack metrology. With its new 150 SE option, SpectraFx 200 enables measurement in the "vacuum UV" (150-nm wavelength) spectrum--providing the enhanced sensitivity needed to accurately monitor film thickness and composition variations on new materials such as high-k films. On nitrided films and hafnium silicate gates, for example, SpectraFx 200 with 150 SE has demonstrated at least a two-fold improvement in repeatability and matching compared to 190-nm wavelength scatterometry-based systems. In addition, the system's AccuFilm capability eliminates the effects of AMC, which can alter accurate measurements on ultra-thin films, affecting capacitance and leakage performance on advanced devices if left unchecked. SpectraFx 200 also provides enhanced 2-D and 3-D product wafer stress metrology--allowing users to obtain wafer stress measurements that correlate to die-level stress more accurately than traditional 1-D monitor wafer measurements, thereby improving root cause analysis.

Meets 300-mm Production Requirements
All major optical components on the SpectraFx 200 have been redesigned to lower spectral distortion, enabling it to achieve industry leading system-to-system and fab-to-fab matching. Customers benefit from improved process transfer, ramp time, and manufacturing efficiency. A faster computer and a cleaner, faster front-end wafer-handler, combined with remote diagnostics and iSupport, makes the SpectraFx 200 the best choice for 300-mm "lights out" automated fab production.

"Today's leading IC manufacturers are grappling with more than just device scaling in order to stay on Moore's Law. New materials are also being integrated into their manufacturing processes, which in turn drives new wafer metrology requirements," stated Sergio Edelstein, vice president and general manager of KLA-Tencor's Films and Surface Technology Division. "At the same time, fabs want to drive down costs by getting the most value out of their equipment and by reducing consumables like monitor wafers. Our new SpectraFx 200 thin-film metrology solution not only improves our customers' manufacturing efficiency, but also helps them to be more cost-effective with their process control strategies, enabling them to be low-cost producers as well as technology leaders.'

About KLA-Tencor: KLA-Tencor is the world leader in yield management and process control solutions for semiconductor manufacturing and related industries. Headquartered in San Jose, Calif., the company has sales and service offices around the world. An S&P 500 company, KLA-Tencor is traded on the Nasdaq National Market under the symbol KLAC. Additional information about the company is available on the Internet at http://www.kla-tencor.com

Contact:
Meggan Powers
Director Corporate Communications

 

 

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